周培根：博士、副研究员，2015年和2020年毕业于开云kaiyun官方网站分别获学士和博士学位。主要研究领域包括毫米波太赫兹核心器件与收发芯片、毫米波太赫兹异质/异构集成技术、毫米波太赫兹通信和感知系统等。近5年，主持江苏省科技重大专项项目课题、JKW创新特区重点项目课题/主题项目、国家重点研发计划项目子课题、国自然/江苏省自然青年项目等项目10余项。在芯片方向顶级会议ISSCC和顶级期刊JSSC、TMTT、TCAS-I共发表论文20余篇（第一作者/通讯作者13篇），总共发表论文100余篇，授权发明专利10余项。
属于洪伟院士、陈继新教授课题组，欢迎感兴趣的同学联系交流。
联系邮箱：pgzhouseu@seu.edu.cn
近5年代表性论文：
[1]Zhou Peigen, Chen Jixin, Yan Pinpin, Yu Jiayang, Hu Jiarui Dong Haoyi, Wang Long, Hou Debin, Gao Hao, Hong Wei "A −28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj," inIEEE Journal of Solid-State Circuits, vol. 56, no. 10, pp. 3077-3093, Oct. 2021, doi: 10.1109/JSSC.2021.3057077.
[2]Zhou Peigen, Chen Jixin, Yan Pinpin, Yu Jiayang, Hou Debin, Gao Hao, Hong Wei "An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range," inIEEE Transactions on Circuits and Systems I: Regular Papers, vol. 69, no. 3, pp. 1041-1050, March 2022, doi: 10.1109/TCSI.2021.3127307.
[3]Zhou Peigen, Chen Jixin, Yan Pinpin, Yu Jiayang, Li Huanbo, Hou Debin, Gao Hao, Hong Wei "A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process," inIEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 7, pp. 3056-3067, July 2020, doi: 10.1109/TMTT.2020.2989112.
[4]Zhou Peigen, Chen Jixin, Yan Pinpin, Hou Debin, Gao Hao, Hong Wei "A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology," inIEEE Solid-State Circuits Letters, vol. 4, pp. 44-47, 2021, doi: 10.1109/LSSC.2021.3054884.
[5]Zhou Peigen, Chen Jixin, Wang Zuojun, Yu Jiayang, Chen Zhe, Gao Hao, Hong Wei "A 270-to-300 GHz Amplifier-Last Transmitter With 6.7 dBm Peak Output Power Using 130 nm SiGe Process," 2025IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, USA, 2025, pp. 175-178, doi: 10.1109/RFIC61188.2025.11082814.
[6] Meng Qianqi, Wang Zhihua,Zhou Peigen（通讯作者）, Tang Dawei, Tang Siyuan, Xiao Junyue, Zhou Rui, Li Jinben, Chen Zhe, Chen Jixin, Gao Hao, Hong Wei "20.10 A 214-to-242GHz Miniaturized Co-Packaged PA-Antenna Array with 29dBm Lens-Less Eirp in a 0.13μm SiGe Process," 2026IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, 2026, pp. 358-360, doi: 10.1109/ISSCC49663.2026.11409245.
[7] Tang Dawei, Yang Chun,Zhou Peigen（通讯作者）, Xia Xiaoyue, Li Zekun, Zhang Rui, Chen Zhe, Chen Jixin, Gao Hao, Hong Wei "A Compact 90–180 GHz, 15–18 dBm Power Amplifier With Novel Self-Shielding Load-Open Balun and Broadband Fourth-Order LC Ladder Power Combiner in 28-nm CMOS," inIEEE Journal of Solid-State Circuits, vol. 60, no. 8, pp. 2680-2693, Aug. 2025, doi: 10.1109/JSSC.2024.3518834.
[8] Tang Dawei, Xia, Xiaoyue, Huang Leyang, Li Zekun, Yang Chun, Yan Zheng, Tang Si-Yuan,Zhou Peigen（通讯作者）, Zhang Rui, Lu Liqun, Zhu Wentao, Chen Zhe, Chen Jixin, Gao Hao, Hong Wei "Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS," inIEEE Journal of Solid-State Circuits, doi: 10.1109/JSSC.2026.3665552.
[9] Zhou Rui, Chen Jixin, Tang Si-Yuan, Li Zekun, Tang Dawei, Zhang Bangjie, Xie Feng,Zhou Peigen（通讯作者）, Huang Yan, Xu Gang, Chen Zhe, Hong Wei "A 200-GHz Modulable Transceiver With 35-dB Tx On–Off Isolation and 16-Gb/s Code Rate for MIMO Radar in 130-nm SiGe Process," inIEEE Journal of Solid-State Circuits, vol. 60, no. 11, pp. 4267-4286, Nov. 2025, doi: 10.1109/JSSC.2025.3563825.
[10] Yu Jiayang, Chen Jixin,Zhou Peigen, Li Huanbo, Wang Zuojun, Li Zekun, Chen Zhe, Yan Pinpin, Hou Debin, Gao Hao, Hong Wei "A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS," inIEEE Journal of Solid-State Circuits, vol. 58, no. 2, pp. 332-344, Feb. 2023, doi: 10.1109/JSSC.2022.3192043.
[11] Tang Dawei, Meng Qianqi,Zhou Peigen, Zhou Rui, Chen Zhe, Chen Jixin, Gao Hao, Hong Wei "Ultra-Broadband Self-Compensated Vector-Modulation Phase Shifter With Over 100-GHz Bandwidth," inIEEE Journal of Solid-State Circuits, vol. 61, no. 6, pp. 2478-2494, June 2026, doi: 10.1109/JSSC.2025.3610844.
[12] Wang Zongxiang, Chen Jixin,Zhou Peigen（通讯作者）, Zhou Rui, Tang Dawei, Tang Si-Yuan, Li Zekun, Meng Qianqi, Hong Wei "45–100-GHz UWB and W-Band High-Efficiency SiGe Power Amplifiers With 20-/20.1-dBm Psat and 17.3%/22.4% Peak PAE," inIEEE Transactions on Microwave Theory and Techniques, vol. 74, no. 2, pp. 1518-1532, Feb. 2026, doi: 10.1109/TMTT.2025.3629872.
[13] Yu Jiayang, Chen Jixin,Zhou Peigen（通讯作者）, Li Zekun, Li Huanbo, Yan Pinpin, Hou Debin, Hong Wei "A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology," inIEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 11, pp. 4925-4936, Nov. 2021, doi: 10.1109/TMTT.2021.3103574.
[14] Wang Zuojun,Zhou, Peigen（通讯作者）, Li Zekun, Xia Xiaoyue, Zhang Rui, Chen Jixin, Hong Wei "A Compact SiGe Amplifier-Frequency-Doubler Chain With 7.1-dBm Psat and 98-GHz Bandwidth for Sub-THz Applications," inIEEE Transactions on Microwave Theory and Techniques, vol. 72, no. 6, pp. 3485-3495, June 2024, doi: 10.1109/TMTT.2023.3328031.
[15] Lyu Wenyan,Zhou Peigen（通讯作者）, Chen Jixin, Li Peiting, Li Jirui, Zheng Sidou, Tang Dawei, Hong Wei "A W-Band Bidirectional RF Front-End in 0.1-μm GaAs pHEMT Technology," inIEEE Transactions on Microwave Theory and Techniques, vol. 73, no. 11, pp. 8757-8767, Nov. 2025, doi: 10.1109/TMTT.2025.3600828.
[16] Li Jirui,Zhou Peigen（通讯作者）, Li Peiting, Lyu Wenyan, Zheng Sidou, Tang Dawei, Li Peiyou, Hong Wei "An E-Band Bidirectional Front-End With 20.9 dBm Peak Output Power in GaAs Process," inIEEE Transactions on Circuits and Systems I: Regular Papers, vol. 73, no. 3, pp. 1889-1899, March 2026, doi: 10.1109/TCSI.2025.3618932.
[17] Yang Chun, Chen Jixin, Tang Dawei,Zhou Peigen（通讯作者）, Chen Zhe, Hong Wei "A 2.17-pJ/Bit 110-to-170-GHz OOK Transmitter With 40-Gb/s Data Rate and 40-dB On-Off Ratio in 28-nm CMOS," in IEEE Transactions on Microwave Theory and Techniques, vol. 73, no. 12, pp. 10476-10487, Dec. 2025, doi: 10.1109/TMTT.2025.3613391.
[18] Tang Dawei, Xia Xiaoyue, Yan Zheng,Zhou Peigen, Li Zekun, Yang Chun, Zhang Rui, Chen Zhe, Chen Jixin, Gao Hao, Hong Wei "24.1 A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psat in 28nm CMOS," 2024 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, 2024, pp. 411-413, doi: 10.1109/ISSCC49657.2024.10454268.
[19] Tang Si-Yuan,Zhou Peigen（通讯作者）, Zhou Rui, Zhang Rui, Wang Zongxiang, Tang Dawei, Wang Long, Xia Xiaoyue, Zhu Wentao, Li Jirui, Li Jinben, Yan Pinpin, Gao Hao, Chen Jixin, Hong Wei "A 200-GHz Phased Array Transmitter with Element-Level Scanning Antenna for ± 45° Scanning Range with 0.71 λ0 Antenna Pitch," 2025IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, USA, 2025, pp. 171-174, doi: 10.1109/RFIC61188.2025.11082962.
[20]Zhou Peigen, Chen Jixin, Yan Pinpin, Chen Zhe, Hou Debin, Hong Wei "A 273.5–312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process," in IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 3, pp. 260-270, May 2020, doi: 10.1109/TTHZ.2020.2967240.
